Bittencourt, C; Landers, R; Llobet, E; Molas, G; Correig, X; Silva, Marcelo de Assumpção Pereira da 
; Sueiras, J E; Calderer, J
Source: Journal of the Electrochemical Society. Unidade: IFSC
Assunto: FILMES FINOS
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ABNT
BITTENCOURT, C et al. Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films. Journal of the Electrochemical Society, v. 149, n. 3, p. H81-H86, 2002Tradução . . Acesso em: 21 maio 2024.APA
Bittencourt, C., Landers, R., Llobet, E., Molas, G., Correig, X., Silva, M. de A. P. da, et al. (2002). Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films. Journal of the Electrochemical Society, 149( 3), H81-H86.NLM
Bittencourt C, Landers R, Llobet E, Molas G, Correig X, Silva M de AP da, Sueiras JE, Calderer J. Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films. Journal of the Electrochemical Society. 2002 ; 149( 3): H81-H86.[citado 2024 maio 21 ]Vancouver
Bittencourt C, Landers R, Llobet E, Molas G, Correig X, Silva M de AP da, Sueiras JE, Calderer J. Effects of oxygen partial pressure and annealing temeprature on the formation of sputtered tungsten oxide films. Journal of the Electrochemical Society. 2002 ; 149( 3): H81-H86.[citado 2024 maio 21 ]
